Passive mode-locking of a Nd: YAG ceramic laser by optical interference modulation in a GaAs wafer

Optics Express

Volumn 15, Issue 9, 2007, Pages 5360-5365

  Xie, Guoqiang ^a,b   Tang, Dingyuan ^a   Kong, Jian ^a   Qian, Liejia ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC MATERIALS; CONTROL NONLINEARITIES; LIGHT INTERFERENCE; NEODYMIUM; OPTICAL KERR EFFECT; SEMICONDUCTING GALLIUM ARSENIDE;

CERAMIC LASERS; KERR NONLINEARITY; OPTICAL INTERFERENCE MODULATION; PASSIVE MODE LOCKING; SATURABLE ABSORBERS;

LASER MODE LOCKING;

EID: 34247859334     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.15.005360     Document Type: Article

References (17)

1. L. Krainer, R. Paschotta, M. Moser, and U. Keller, "Passively mode-locked picosecond lasers with up to 59 GHz repetition rate," Appl. Phys. Lett. 77, 2104-2105 (2000).
2. U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. A. derAu, "Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Top. Quantum Electron. 2, 435-453 (1996).
3. 4 laser with a semiconductor saturable absorber mirror," IEEE J. Quantum Electron. 40, 505-508 (2004).
4. Z. H. Zhang, L. J. Qian, D. Y. Fan, and X. M. Deng, "Gallium arsenide- a new material to accomplish passively mode-locked Nd:YAG laser," Appl. Phys. Lett. 60, 419-421 (1992).
5. 4 laser with a single crystal GaAs wafer," Jpn. J. Appl. Phys. 41, L1224-L1227 (2002).
6. 3 ceramic laser with a GaAs-saturable absorber mirror," Opt. Commun. 237, 165-168 (2004).
7. 4 laser with LT-GaAs output coupler," Opt. Commun. 261, 332-335 (2006).
8. B. Bosacchi, J. S. Bessey, and F. C. Jain, "2-photon absorption of neodymium laser-radiation in gallium-arsenide," J. Appl. Phys. 49, 4609-4611 (1978).
9. T. F. Boggess, A. L. Smirl, S. C. Moss, I. W. Boyd, and E. W. Vanstryland, "Optical limiting in GaAs," IEEE J. Quantum Electron. 21, 488-494 (1985).
10. M. Giehler, J. Herfort, W. Ulrici, L. Daweritz, and K. H. Ploog, "Optical properties of low-temperature grown GaAs on Bragg reflectors," J. Appl Phys. 92, 2974-2796 (2002).
11. M. Giehler, J. Herfort, and K. H. Ploog, "Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector," Mater. Sci. Semicond. Process 6, 257-261 (2003).
12. 12 ceramics," Appl. Phys. Lett. 77, 939-941 (2000).
13. Y. F. Qi, X. L. Zhu, Q. H. Lou, J. H. Ji, J. X. Dong, and Y. R. Wei, "Nd : YAG ceramic laser obtained high slope-efficiency of 62% in high power applications," Opt. Express 13, 8725-8729 (2005).
14. 4+: YAG saturable absorber," J. Opt. A- Pure Appl. Opt. 8, 550-554 (2006).
15. L. Quo, W. Hou, H. B. Zhang, Z. P. Sun, D. F. Cui, Z. Y. Xu, Y. G. Wang, and X. Y. Ma, "Diode-end-pumped passively mode-locked ceramic Nd : YAG Laser with a semiconductor saturable mirror," Opt. Express 13, 4085-4089 (2005).
16. J. L. Oudar, "Ultrafast semiconductor all-optical processing devices for telecommunications applications," in Ultra-fast Photonics, A. Miller, D. T. Reid, and D. M. Finlayson, eds. (Academic, 2004), pp. 225-264.
17. M. Sheikbahae, D. C. Hutchings, D. J. Hagan, and E. W. Van Stryland, "Dispersion of bound electronic nonlinear refraction in solids," IEEE J. Quantum Electron. 27, 1296-1309 (1991).