Electrical manipulation of spin precession in an InGaAs-Based 2DEG due to the rashba spin-orbit interaction

IEEE Transactions on Electron Devices

Volumn 54, Issue 5, 2007, Pages 955-960

  Nitta, Junsaku ^a,b,c   Bergsten, Tobias ^a,b,d  

^a NTT Basic Research Laboratories   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Aharonov Casher effect; InGaAs 2DEG; Rashba spin orbit interaction (SOI); Spin precession

Indexed keywords

ELECTRON MOBILITY; ELECTRON-ELECTRON INTERACTIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPIN DYNAMICS;

SPIN INTERFERENCE; SPIN PRECESSION; SPIN-ORBIT INTERACTION;

MAGNETOELECTRONICS;

EID: 34247857657     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.894370     Document Type: Article

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