Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures

Journal of Materials Science: Materials in Electronics

Volumn 18, Issue 7, 2007, Pages 711-714

  Emtsev, V V ^a   Ehrhart, P ^b   Poloskin, Dmitrii S ^a   Emtsev, K V ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENIC TEMPERATURE; FAST ELECTRON IRRADIATION; HEAVILY DOPED SILICON;

DEFECTS; DOPING (ADDITIVES); ELECTRON IRRADIATION; LOW TEMPERATURE PHENOMENA;

SEMICONDUCTING SILICON;

EID: 34247854844     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-006-9103-6     Document Type: Article

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