Fabrication and characterization of point defect photonic crystal nanocavities at telecom wavelength

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 1480-1483

  Gerardino, A ^a   Francardi, M ^a   Balet, L ^b   Monat, C ^b   Zinoni, C ^b   Alloing, B ^b   Li, L H ^b   Le Thomas, N ^b   Houdre R ^b   Fiore, A ^a,b  

^a IFN CNR   (Italy)

^b EPFL   (Switzerland)

Author keywords

Optical nanocavities; Photonic crystals; Single photon sources

Indexed keywords

MICROELECTRONICS; PHOTONS; POINT DEFECTS; QUANTUM CRYPTOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

OPTICAL NANOCAVITIES; SINGLE PHOTON SOURCES; TELECOM WAVELENGTH;

PHOTONIC CRYSTALS;

EID: 34247552797     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.225     Document Type: Article

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