Advanced 100V, 0.13 μm BCD process for next generation automotive applications

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Wessels, Piet ^a   Swanenberg, Maarten ^a   Claes, Jan ^a   Ooms, Eric R ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTROMAGNETIC COMPATIBILITY; FLASH MEMORY; HIGH TEMPERATURE OPERATIONS; MICROPROCESSOR CHIPS; RANDOM ACCESS STORAGE; ROM;

BULK BASED TECHNOLOGY; PACKING DENSITY; POWER TRANSISTORS; SUBMICRON BASED CMOS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 34247512621     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. J.A. van der Pol et al. 'A-BCD: an economic 100V resurf Silicon-On-Insulator BCD technology for Consumer and Automotive Applications', ISPSD'2000, page 327.
2. J.A. Appels, H.M.J. Vaes, 'HV thin layer devices (RESURF devices)', Proc. IEDM, pp. 238-241, (1979)
3. A.W. Ludikhuize, 'A versatile 250/300V IC process', IEEE Trans. El. Dev., pp. 2008-2015, (1986)
4. M.J.Swanenberg e.a, 'Applying DMOSTs, diodes and thyristors above and below substrate in thin layer SOI', ISPSD'2004, page 232.