The effect of sulphur pressure on the depth distribution of elements in Cu(In,Ga)S2 films

Thin Solid Films

Volumn 480-481, Issue , 2005, Pages 71-75

  Kaigawa, R ^a   Wada, T ^a   Bakehe, S ^b   Klenk, R ^b  

^a RYUKOKU UNIVERSITY   (Japan)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Cu(In,Ga)S2; Depth profile; Evaporation; Impurities; Solar cell

Indexed keywords

ENERGY CONVERSION; EVAPORATION; FILM GROWTH; IMPURITIES; PRESSURE EFFECTS; SECONDARY ION MASS SPECTROMETRY; SOLAR CELLS; SULFUR; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

BAND GAP; CU(IN,GA)S2; DEPTH PROFILE; THIN FILM SOLAR CELLS;

COPPER COMPOUNDS;

EID: 18444364844     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.002     Document Type: Conference Paper

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