Improvement of efficiency and stability utilizing a wide band gap material as the host for red organic light-emitting diodes

Semiconductor Science and Technology

Volumn 22, Issue 3, 2007, Pages 287-291

  Tang, Hao ^a   Li, Ying ^a   Wang, Xiuru ^a   Wang, Wengen ^a   Sun, Runguang ^a,b  

^a SHANGHAI UNIVERSITY   (China)

^b Shanghai SVA NEC LCD CO Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTROLUMINESCENCE; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; ENERGY TRANSFER; OPTICAL PROPERTIES;

BAND GAP MATERIALS; EMISSION EFFICIENCY; ORGANIC LIGHT-EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 34247269726     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/3/020     Document Type: Article

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