Observation of bulk electronic states of Kondo semiconductor YbB12 by high-resolution soft X-ray photoemission spectroscopy

Journal of Electron Spectroscopy and Related Phenomena

Volumn 156-158, Issue , 2007, Pages 472-475

  Shigemoto, A ^a   Yamaguchi, J ^a   Sekiyama, A ^a   Imada, S ^a   Yamasaki, A ^a   Irizawa, A ^a   Ukawa, T ^a   Muro, T ^b   Iga, F ^c   Takabatake, T ^c   Suga, S ^a  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

Author keywords

4f peak shift; Kondo semiconductor; SIAM; YbB12

Indexed keywords

BINDING ENERGY; ELECTRONIC STATES; KONDO EFFECT; PHOTOEMISSION; SINGLE CRYSTALS; VALENCE BANDS; X RAY PHOTOELECTRON SPECTROSCOPY;

KONDO SEMICONDUCTORS; PHOTOEMISSION SPECTRA; SINGLE IMPURITY ANDERSON MODEL (SIAM); SOFT X RAYS;

SEMICONDUCTOR MATERIALS;

EID: 34247269557     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elspec.2006.12.052     Document Type: Article

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