High-density plane deposition kinetics and facet propagation in silicon-selective epitaxial growth

Semiconductor Science and Technology

Volumn 22, Issue 1, 2007, Pages

  Loubet, Nicolas ^a   Talbot, Alexandre ^a   Dutartre, Didier ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; SEMICONDUCTING SILICON; SILICON WAFERS;

CHEMICAL VAPOUR ETCHING; FULL-SHEET WAFER; HIGH-DENSITY PLANE DEPOSITION KINETICS; SILICON-SELECTIVE EPITAXIAL GROWTH;

REACTION KINETICS;

EID: 34247214500     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S35     Document Type: Article

References (8)

1. Thompson S E et al 2004 IEEE Electron Device Lett. 25 191-3
2. Ang K-W, Chui K J, Bliznetsov V, Anyan D, Balasubramanian N, Li M F, Samudra G and Yeo Y-C 2005 Proc. IEDM 2004 pp 1069-71
3. Loubet N, Talbot A and Dutartre D 2006 Proc. MRS (Spring 2006)
4. Secco d'Aragona F 1972 J. Electrochem. Soc. 119 948
5. Vescan L, Grimm K and Dieker C 1998 J. Vac. Sci. Technol. 16 1549-54
6. Talbot A, Loubet N and Dutartre D 2004 Proc. ICSI-4 Conf.
7. Hartmann J M, Burdin M, Rolland G and Billon T 2006 Proc. ISTDM pp 172-3
8. Dutartre D, Talbot A and Loubet N 2006 ECS Conf.