Vapour pressure measurement of low volatility precursors

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 1000-1002

  Rushworth, S A ^a   Smith, L M ^a   Kingsley, A J ^a   Odedra, R ^a   Nickson, R ^b   Hughes, P ^b  

^a Epichem Ltd   (United Kingdom)

^b MKS Instruments   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; CHEMICAL VAPOR DEPOSITION; CONDENSATION; NAPHTHALENE; SEMICONDUCTOR DEVICE STRUCTURES; TANTALUM COMPOUNDS; VAPOR PRESSURE;

PRESSURE PENTAKIS(DIMETHYLAMIDO)TANTALUM (PDMAT); TETRAKIS(ETHYLMETHYLAMIDO)HAFNIUM (TEMAH); VAPOR PRESSURE MEASUREMENT; VOLTALITY;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 14644440520     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.007     Document Type: Conference Paper

References (6)

1. M. Fulem Vapour pressure of metalorganic precursors J Cryst Growth 248 2003 99 107
2. C.L. Griffiths Dynamic vapour pressure measurements of the dimethyl zinc triethylamine adduct using an ultrasonic monitor Appl Phys Lett 68 9 1996 1294 1296
3. O. Kayser Vapour pressure of MOCVD precursors Chemtronics 3 1988 90 93
4. D.L. Camin, and F.D. Rossine Physical properties of 14 American petroleum institute research hydrocarbons C9 to C15 J Phys Chem 59 1955 1173 1179
5. L. Fowler, and N.W. Trump Vapour pressure of naphthalene. New measurements between 40 °C and 180 °C J Chem Eng Data 13 2 1968 209 210
6. Handbook of Chemistry and Physics, 80th ed., ISBN 0849304806. p. 6-87