High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal-organic precursor TBTDET

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 700-703

  Pinzelli, L ^a,b   Gros Jean, M ^a   Brechet Y ^b   Volpi, F ^b   Bajolet, A ^a   Giraudin, J C ^a  

^a STMICROELECTRONICS   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROELECTRONICS; ORGANOMETALLICS; TANTALUM COMPOUNDS;

CAPACITANCE DEVICES; TRENCH FIELDS;

DIELECTRIC MATERIALS;

EID: 34247115117     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.066     Document Type: Article

References (6)

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2. Bajolet A, Giraudin J-C, Rossato C, Pinzelli L, Bruyere S, Cremer S, et al. In: Proceeding of the IEEE ESSDERC conference; 2005. p. 121-4.
3. Zeng W., Eisenbraun E., Frisch H., Sullivan J.J., Kaloyeros A.E., Margalit J., et al. J Electrochem Soc 151 8 (2004) F172-F177
4. Raaijmakers I.J. Thin Solid Films 247 (1994) 85-93
5. 5/TiN. Application aux capacités MIM pour les circuits intégrés analogiques et radiofréquences; 2005.
6. Cussler E.L. Diffusion, mass transfer in fluid systems (1984), Cambridge University Press