Stabilization of the pentagonal surface of the icosahedral AlPdMn quasicrystal by controlled Si absorption

Applied Surface Science

Volumn 253, Issue 14, 2007, Pages 5947-5950

  Longchamp, J N ^a   Erbudak, M ^a   Weisskopf, Y ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

AlPdMn; Debye temperature; Epitaxy; LEED; Quasicrystals; Silicon

Indexed keywords

ABSORPTION; ALUMINUM COMPOUNDS; DEBYE TEMPERATURE; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; SILICON;

PENTAGONAL SURFACE; VACANCY MEDIATED PROCESS;

QUASICRYSTALS;

EID: 34247110387     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.12.107     Document Type: Article

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