1200-V low-loss IGBT module with low noise characteristics and high dIC/dt controllability

IEEE Transactions on Industry Applications

Volumn 43, Issue 2, 2007, Pages 513-519

  Onozawa, Yuichi ^a   Otsuki, Masahito ^a   Iwamuro, Noriyuki ^a   Miyashita, Syuji ^a   Miyasaka, Tadashi ^a   Seki, Yasukazu ^a   Matsumoto, Takashi ^b  

^a FUJI ELECTRIC CO   (Japan)

^b UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

Electromagnetic interference (EMI) noise; Miller capacitance; Reverse recovery dV dt; Turn on di dt controllability

Indexed keywords

CONTROLLABILITY; ENERGY DISSIPATION; MULTICHIP MODULES; OPTIMIZATION; SEMICONDUCTOR DIODES; SIGNAL INTERFERENCE; SPURIOUS SIGNAL NOISE;

FREE WHEELING DIODE; MILLER CAPACITANCE; REVERSE-RECOVERY DV/DT;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 34147145301     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2006.890024     Document Type: Article

References (8)

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