Luminescence and recombination centers in ZnO/Si films

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 28, Issue 2, 2007, Pages 196-199

  Liu, Cihui ^a   Yao, Ran ^a   Su, Jianfeng ^a   Ma, Zeyu ^a   Fu, Zhuxi ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Defect; Heterojunction; MOCVD; ZnO p Si

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; HETEROJUNCTIONS; IONIZATION POTENTIAL; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS;

GAUSS FIT CURVES; IONIZATION ENERGY; RECOMBINATION CENTERS;

ZINC OXIDE;

EID: 34047231027     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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