Phonon frequencies and related parameters in GaxIn1-xSb and InAsxP1-x

Physica B: Condensed Matter

Volumn 393, Issue 1-2, 2007, Pages 73-77

  Bouarissa, Nadir ^a  

^a KING KHALID UNIVERSITY   (Saudi Arabia)

Author keywords

Alloys; Collective effects; Coupling parameter; Phonon frequencies; Polarons in lattices; Semiconductors

Indexed keywords

BAND STRUCTURE; CRYSTALS; DEBYE TEMPERATURE; NEGATIVE IONS; PHONONS; POLARONS;

COLLECTIVE EFFECTS; COUPLING PARAMETERS; PHONON FREQUENCIES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 34047174502     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2006.12.041     Document Type: Article

References (30)

1. Iga K., and Kinoshita S. Process Technology for Semiconductor Lasers (1996), Springer, Berlin
2. Vurgaftman I., Meyer J.R., and Ram-Mohan L.R. J. Appl. Phys. 89 (2001) 5815 and references therein
3. Meyer J.R., Olafsen L.J., Aifer E.H., Bewley W.W., Felix C.L., Vurgaftman I., Yang M.J., Goldberg L., Zhang D., Lin C.H., Pei S.S., and Chow D.H. IEE Proc. Optoelectron. 145 (1998) 275
4. Fuchs F., Weimer U., Pletschen W., Schmitz J., Ahlswede E., Walther M., Wagner J., and Koidl P. Appl. Phys. Lett. 71 (1997) 3251
5. Nicholas R.J., Stradling R.A., and Ramage J.C. J. Phys. C 12 (1979) 1641
6. Beaudoin M., Bensaada A., Leonelli R., Desjardins P., Masut R.A., Isnard L., Chennouf A., and L'Esperance G. Phys. Rev. B 53 (1996) 1990
7. Wada M., Araki S., Kudou T., Umezawa T., Nakajima S., and Ueda T. Appl. Phys. Lett. 76 (2000) 2722
8. Bouarissa N. Mater. Sci. Eng. B 86 (2001) 53
9. Roth A.P., and Fortin E. Can. J. Phys. 56 (1978) 1468
10. Auvergne D., Camassel J., Mathieu H., and Joullie A. J. Phys. Chem. Solids 35 (1974) 133
11. Bouarissa N., Amrane N., and Aourag H. Infrared Phys. Technol. 36 (1995) 755
12. Bouarissa N. Mater. Sci. Eng. B 100 (2003) 280
13. Cohen M.L., and Chelikowsky J.R. Electronic Structure and Optical Properties of Semiconductors (1988), Springer, Berlin
14. Harrison P. Quantum Wells, Wires and Dots: Theoretical and Computational Physics (2000), Wiley
15. Kobayasi T., and Nara H. Bull. Coll. Med. Sci. Tohoku Univ. 2 (1993) 7
16. Bechiri A., and Bouarissa N. Superlatt. Microstruct. 39 (2006) 478
17. Adachi S. J. Appl. Phys. 61 (1987) 4869 and references cited therein
18. Zollner S., Garriga M., Humlicek J., Gopalan S., and Cardona M. Phys. Rev. B 43 (1991) 4349
19. Alibert C., Joullie A., Joullie A.M., and Ance C. Phys. Rev. B 27 (1983) 4946
20. Lee S.J., Kwon T.S., Nahm K., and Kim C.K. J. Phys.: Condens. Matter 2 (1990) 3253
21. Bouarissa N. Phys. Lett. A 245 (1998) 285
22. Kittel C. Introduction to Solid State Physics. fifth ed. (1976), Wiley, New York
23. Davydov S.Yu., and Tikhonov S.K. Semiconductors 32 (1998) 947
24. Bouarissa N., Bougouffa S., and Kamli A. Semicond. Sci. Technol. 20 (2005) 265
25. Harrison W.A. Electronic Structure and the Properties of Solids (1980), Freeman, San Fransisco
26. In: Levinshtein M., Rumyantsev S., and Shur M. (Eds). Handbook Series on Semiconductor Parameters vol. 2 (1999), World Scientific, Singapore
27. Rode D.L. Semiconductors and semimetals. In: Willardson R.K., and Beer A.C. (Eds). Transport Phenomena vol. 10 (1975), Academic Press, New York 1
28. Adachi S. J. Appl. Phys. 58 (1985) R1
29. Devreese J.T. Polarons in Ionic Crystals and Polar Semiconductors (1972), Amsterdam, North-Holland
30. Phillips J.C. Bonds and Bands in Semiconductors (1973), New York, Academic Press