Low temperature ZEP-520A development process for enhanced critical dimension realization in reactive ion etch etched polysilicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 1, 2007, Pages 102-105

  Wang, H ^a   Laws, G M ^a   Milicic, S ^a   Boland, P ^a   Handugan, A ^a   Pratt, M ^a   Eschrich, T ^a   Myhajlenko, S ^a   Allgair, J A ^b   Bunday, B ^b  

^a AZ 85281   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LINEWIDTHS; OPTICAL SCATTEROMETRY METHODS; PATTERN TRANSFER;

DIFFRACTION GRATINGS; ELECTRIC POTENTIAL; ELECTRON BEAMS; OPTICAL RESOLVING POWER; OPTIMIZATION; REACTIVE ION ETCHING;

POLYSILICON;

EID: 34047160593     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2426976     Document Type: Article

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