Next generation radiation-hardened SRAM for space applications

IEEE Aerospace Conference Proceedings

Volumn 2006, Issue , 2006, Pages

  Hafer, Craig ^a   Mabra, Jonathan ^a   Slocum, Duane ^a   Kalkur, T S ^b  

^a Gaisler Research   (United Kingdom)

^b UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IONIZING DOSE; SHALLOW TRENCH ISOLATION (STI); SINGLE EVENT LATCHUP (SEL); SINGLE EVENT UPSET (SEU);

CHARGED PARTICLES; CMOS INTEGRATED CIRCUITS; ERROR DETECTION; IONIZING RADIATION; RADIATION HARDENING; SPACE APPLICATIONS;

STATIC RANDOM ACCESS STORAGE;

EID: 34047126019     PISSN: 1095323X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. CREME96 Web site http://creme96.nrl.navy.mil
2. C. Hafer, et. al., "Commercially Fabricated Radiation Hardened 4Mbit SRAM," 2004 IEEE Aerospace Applications Conference Proceedings, 2004.
3. G. Messenger, M. Ash, Single Event Phenomena, Chapman and Hill, 1997, p. 130.
4. Texas A&M University K500 cyclotron Web site http://cyclotron.tamu. edu
5. M. Huhtinen, F. Faccio, "Computational Method to Estimate Single Event Upset Rates in an Accelerator Environment," Web site http://lhcb-elec.web.cern.ch/lhcb-elec/meetings/ lhcbweek_december99/seu_cms.pdf