Exchange bias in bilayers based on the ferroelectric antiferromagnet BiFeO3

Philosophical Magazine Letters

Volumn 87, Issue 3-4, 2007, Pages 175-181

  Qi, X ^a,c   Kim, H ^b   Blamire, M G ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b SAMSUNG Electronics   (South Korea)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; ELECTROMAGNETIC WAVE POLARIZATION; FERROMAGNETIC MATERIALS; MAGNETIC FILMS; MAGNETIC LEAKAGE;

ELECTRIC POLARIZATION; EXCHANGE BIAS; EXCHANGE INTERACTION; FERROMAGNETS;

MULTILAYERS;

EID: 33947695749     PISSN: 09500839     EISSN: 13623036     Source Type: Journal    
DOI: 10.1080/09500830601175496     Document Type: Article

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