Highly scalable ballistic injection AND-type (BiAND) flash memory

IEEE Transactions on Electron Devices

Volumn 53, Issue 1, 2006, Pages 109-111

  Wu, Meng Yi ^a   Dai, Sheng Huei ^a   Hu, Shu Fen ^b   Yang, Evans Chíng Sung ^c   Hsu, Charles Ching Hsiang ^c   King, Ya Chin ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c EMEMORY TECHNOLOGY INC   (Taiwan)

Author keywords

AND type array; Ballistic; Flash memory; Split gate flash

Indexed keywords

COMPUTER PROGRAMMING; ELECTRIC CURRENTS; ELECTRON INJECTION; LOGIC GATES; TRENCHING;

AND-TYPE ARRAY; BALLISTIC INJECTION; BALLISTIC SOURCE SIDE INJECTION (BSSI); PROGRAMMING SPEED; SPLIT-GATE FLASH;

FLASH MEMORY;

EID: 33947694327     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.860636     Document Type: Article

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