Theoretical study of the adsorption of H on Si n clusters, (n=3-10)

Journal of Chemical Physics

Volumn 123, Issue 21, 2005, Pages

  Tiznado, William ^a   Ona, Ofelia B ^b   Bazterra, Víctor E ^c   Caputo, María C ^b   Facelli, Julio C ^c   Ferraro, Marta B ^b   Fuentealba, Patricio ^a  

^a UNIVERSITY OF CHILE   (Chile)

^b UNIVERSIDAD DE BUENOS AIRES   (Argentina)

^c UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FUKUI FUNCTION; RELAXATION EFFECTS; SILICON CLUSTERS;

ADSORPTION; GENETIC ALGORITHMS; HYDROGEN; RELAXATION PROCESSES; SILICON;

ATOMIC PHYSICS;

HYDROGEN; SILICON;

ADSORPTION; ALGORITHM; ARTICLE; BINDING SITE; CHEMISTRY; THEORETICAL MODEL;

ADSORPTION; ALGORITHMS; BINDING SITES; HYDROGEN; MODELS, THEORETICAL; SILICON;

EID: 33947642194     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2128675     Document Type: Article

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