Aperture-collimated double-gated silicon field emitter arrays

IEEE Transactions on Electron Devices

Volumn 54, Issue 3, 2007, Pages 601-608

  Chen, Liang Yu ^a   Akinwande, Akintunde Ibitayo ^a  

^a USA   (United States)

Author keywords

Electron beam collimation; Electron emission; Focusing

Indexed keywords

ANODES; CHARACTERIZATION; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON BEAMS; ELECTRON EMISSION; FABRICATION; FINITE ELEMENT METHOD;

DOUBLE-GATED SILICON FIELD EMITTER ARRAYS; ELECTRON BEAM COLLIMATION;

SEMICONDUCTING SILICON;

EID: 33947641551     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.890388     Document Type: Article

References (20)

1. C. A. Spindt, C. E. Holland, I. Brodie, J. B. Mooney, and E. R. Westerberg, "Field-emitter arrays applied to vacuum florescent display," IEEE Trans. Electron Devices, vol. 36, no. 1, pp. 225-227, Jan. 1989.
2. W. B. Choi, D. S. Chung, J. H. Kang, H. Y. Kim, Y. W. Jin, I. T. Han, Y. H. Lee, J. E. Jung, N. S. Lee, G. S. Park, and J. M. Kim, "Fully sealed, high-brightness carbon-nanotube field-emission display," Appl. Phys. Lett., vol. 75, no. 20, pp. 3129-3131, 1999.
3. N. L. Rupesinghe, M. Chhowalla, K. B. K. Teo, and G. A. J. Amaratunga, "Field emission vacuum power switch using vertically aligned carbon nanotubes, in Proc. 14th Int. Vacuum Microelectron. Conf., 2001, pp. 3-4.
4. S. T. Lam, "Field emission information storage technology," in Proc. 14th Int. Vacuum Microelectron. Conf., 2001, pp. 135-136.
5. C. A. Spindt, C. E. Holland, A. Rosengreen, and I. Brodie, "Field-emitter-array development for microwave applications," in Proc. IEEE Int. Conf. Plasma Sci., Jun. 1995, p. 133.
6. C.-Y. Hong and A. I. Akinwande, "Temporal and spatial current stability of the integrated LD-MOSFET/field emission arrays," in IEDM Tech. Dig., Dec. 2002, pp. 393-396.
7. C.-Y. Hong and A. I. Akinwande, "Temporal and spatial current stability of the smart field emission arrays," IEEE Trans. Electron Devices, vol. 52, no. 10, pp. 2323-2328, Oct. 2005.
8. S. Kanemaru, T. Hirano, K. Honda, and J. Itoh, "Stable emission from a MOSFET-structured emitter tip in poor vacuum," Appl. Surf. Sci., vol. 146, no. 1-4, pp. 198-202, 1999.
9. L. Dvorson and A. I. Akinwande, "Double-gated Spindt emitters with stacked focusing electrode," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 20, no. 1, pp. 53-59, Jan. 2002.
10. C.-M. Tang, T. A. Swyden, and A. C. Ting, "Planar lenses for field-emitter arrays," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 13, no. 2, pp. 571-575, Mar./Apr. 1995.
11. J. Itoh, Y. Tohma, K. Morikawa, S. Kanemaru, and K. Shimizu, "Fabrication of double-gated Si field emitter arrays for focused electron beam generation," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 13, no. 5, pp. 1968-1972, Sep./Oct. 1995.
12. C. Py, J. Itoh, T. Hirano, and S. Kanemaru, "Beam focusing characteristics of silicon microtips with an in-plane lens," IEEE Trans. Electron Devices, vol. 44, no. 3, pp. 498-502, Mar. 1997.
13. C. A. Spindt, I. Brodie, L. Humphrey, and E. R. Westerberg, "Physical properties of thin-film field emission cathodes with molybdenum cones," J. Appl. Phys., vol. 47, no. 12, pp. 5248-5263, 1976.
14. L. Dvorson, G. Sha, I. Kymissis, C.-Y. Hong, and A. I. Akinwande, "Electrical and optical characterization of field emitter tips with integrated vertically stacked focus," IEEE Trans. Electron Devices, vol. 50, no. 12, pp. 2548-2558, Dec. 2003.
15. L. Dvorson, M. Ding, and A. I. Akinwande, "Analytical electrostatic model of silicon conical field emitters - Part I," IEEE Trans. Electron Devices, vol. 48, no. 1, pp. 134-143, Jan. 2001.
16. L. Dvorson, M. Ding, "Analytical electrostatic model field emitters - Part II: Devices with focusing electrode," IEEE Trans. Electron Devices, vol. 48, no. 1, pp. 144-148, Jan. 2001.
17. G. N. A. van Veen, "Space-charge effects in Spindt-type field emission cathodes," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 12, no. 2, pp. 655-661, Mar./Apr. 1994.
18. L. Dvorson, I. Kymissis, and A. I. Akinwande, "Novel CMP-based process for fabricating arrays of double-gated silicon field emitters," in Proc. 14th Int. Vacuum Microelectron. Conf., 2001, pp. 139-140.
19. L.-Y. Chen and A. I. Akinwande, "Negative transconductance region in the double-gated silicon field emitter arrays," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 24, no. 4, pp. 1878-1885, Jul./Aug. 2006.
20. J.-Y. Yang, F. T. Korsmeyer, V. Rabinovich, M. Ding, S. D. Senturia, and A. I. Akinwande, "An efficient three-dimensional CAD tool for field-emission devices," in IEDM Tech. Dig., Dec. 1998, pp. 863-866.