Quantitative structural characterization of GaN quantum dot ripening using reflection high-energy electron diffraction

Journal of Applied Physics

Volumn 101, Issue 5, 2007, Pages

  Coraux, J ^a   Favre Nicolin, V ^b   Renevier, H ^b   Proietti, M G ^c   Amstatt, B ^a   Bellet Amalric, E ^a   Daudin, B ^a  

^a CEA GRENOBLE   (France)

^b UNIV GRENOBLE ALPES   (France)

^c UNIVERSITY OF ZARAGOZA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; STRAIN RELAXATION; X RAY DIFFRACTION;

THERMAL RIPENING; X-RAY MEASUREMENTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947408392     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2422902     Document Type: Article

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