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Volumn 301-302, Issue SPEC. ISS., 2007, Pages 748-750

Shape transformation of self-assembled InAs quantum dots by overgrowth with GaAs and AlAs

Author keywords

A1. Atomic force microscopy; A1. Deep Level transient spectroscopy; A1. Nanostructures; A1. Photoluminescence; A3. Quantum dots

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; NANOSTRUCTURES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33947308574     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.157     Document Type: Article
Times cited : (5)

References (9)
  • 6
  • 7
    • 0016081559 scopus 로고
    • Deep-level transient spectroscopy: a new method to characterize traps in semiconductors
    • Lang D.V. Deep-level transient spectroscopy: a new method to characterize traps in semiconductors. J. Appl. Phys. 45 (1974) 3023
    • (1974) J. Appl. Phys. , vol.45 , pp. 3023
    • Lang, D.V.1
  • 9
    • 42749107321 scopus 로고    scopus 로고
    • Charge-state dependence of InAs quantum-dot emission energies
    • Schulz S., Schnüll S., Heyn Ch., and Hansen W. Charge-state dependence of InAs quantum-dot emission energies. Phys. Rev. B 69 (2004) 195317
    • (2004) Phys. Rev. B , vol.69 , pp. 195317
    • Schulz, S.1    Schnüll, S.2    Heyn, Ch.3    Hansen, W.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.