A novel way of modifying nano grain size by solution concentration in the growth of ZnAl2O4 thin films

Journal of Nanoparticle Research

Volumn 9, Issue 2, 2007, Pages 331-335

  Kumar, K ^a,b   Ramamoorthy, K ^a   Koinkar, P M ^c   Chandramohan, R ^d   Sankaranarayanan, K ^a  

^a ALAGAPPA UNIVERSITY   (India)

^b SO PL Kumarappan APM   (India)

^c Korea University   (South Korea)

^d Sree Sevugan Annamalai College   (India)

Author keywords

Compound semiconductor; Liquid phase deposition; Nano crystalline material; Nanoengineering; Surface morphology; X ray diffraction

Indexed keywords

COMPOUND SEMICONDUCTORS; LIQUID PHASE DEPOSITION; NANOENGINEERING; TERNARY OXIDE MATERIALS;

CHEMICAL MODIFICATION; DEPOSITION; GRAIN SIZE AND SHAPE; TERNARY SYSTEMS; THIN FILMS; ZINC COMPOUNDS;

FILM GROWTH;

ACID; BASE; FLUORINE; NANOFILM; NANOMATERIAL; SCAVENGER; UNCLASSIFIED DRUG; ZINC ALUMINATE; ZINC DERIVATIVE; ZINC OXIDE;

ARTICLE; CATALYST; CHEMICAL REACTION; COST; DILUTION; FILM; FOIL; GRAIN; LIQUID PHASE DEPOSITION; MORPHOLOGICAL TRAIT; NANOANALYSIS; PRIORITY JOURNAL; ROOM TEMPERATURE; STRUCTURE ANALYSIS; SURFACE PROPERTY; TECHNIQUE; X RAY DIFFRACTION;

EID: 33947167705     PISSN: 13880764     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11051-006-9108-3     Document Type: Article

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