High performance RF power LDMOSFETs for cellular handsets formed in thick-strained-Si/relaxed-SiGe structure

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 365-368

  Kondo, M ^a   Sugii, N ^b   Hoshino, Y ^a   Hirasawa, W ^c   Kimura, Y ^b   Miyamoto, M ^b   Fujioka, T ^a   Kamohara, S ^a   Kondo, Y ^a   Kimura, S ^b   Yoshida, I ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b HITACHI LTD   (Japan)

^c Renesas Eastern Japan Semiconductor Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC THERMAL SIMULATION;

CODE DIVISION MULTIPLE ACCESS; COMPUTER SIMULATION; MOBILE PHONES; RADIO FREQUENCY AMPLIFIERS; SILICON COMPOUNDS;

MOSFET DEVICES;

EID: 33847727850     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. I. Yoshida et al., IEDM 1997, Tech. Digest, pp. 51-54.
2. N. Sugii et al., 2005 VLSI Symp., Tech. Dig., pp. 54-55.
3. J. G. Fiorenza et al., Semicond. Sci. Tech., vol. 19. pp. L4-L8, 2004.