Demonstration of Ni fully germanoSilicide as a pFET gate electrode candidate on HfSiON

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 638-641

  Yu, H Y ^a   Singanamalla, R ^a   Opsomer, K ^a   Augendre, E ^a   Simoen, E ^a   Kittl, J A ^b   Kubicek, S ^a   Severi, S ^a   Shi, X P ^a   Brus, S ^a   Zhao, C ^a   De Marneffe, J F ^a   Locorotondo, S ^a   Shamiryan, D ^a   Van Dal, M ^c   Veloso, A ^a   Lauwers, A ^a   Niwa, M ^d   Maex, K ^a   Meyer, K D ^a   Absil, P ^a   Jurczak, M ^a   Biesemans, S ^a   more..

^a IMEC   (Belgium)

^b TEXAS INSTRUMENTS   (Belgium)

^c Phillips Research Leuven   (Belgium)

^d CMOS Device Research Group   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL INTERFACE; FULLY GERMANO-SILICIDE (FUGESI); GATE LEAKAGE;

ELECTRODES; FERMI LEVEL; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; NICKEL;

SILICIDES;

EID: 33847725830     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. ITRS, SIA, 2003
2. E.P. Gusev, et al. IEDM Tech. Dig, p.79, (2004)
3. A. Veloso, et al. IEDM Tech. Dig, p.855, (2004)
4. K. Takahashi, et al. IEDM Tech. Dig, p. 91 (2004)
5. M. Terai, et al., Sym. Tech. VLSI, p.68, (2005)
6. C. Hobbs et al, Sym. Tech. VLSI, p.9, (2003)
7. S. Van Elshocht, et. al, to be published
8. H. Takeuchi, et al., IEDM Tech. Dig, p.829, (2004)
9. D.M. Fleetwood et al., IEEE Trans. Nucl. Sci., p.2674, (2002)
10. C. Shen, IEDM Tech. Dig, p.733 (2004)