Light-addressable electrode with hydrogenated amorphous silicon and low-conductive passivation layer for stimulation of cultured neurons

Applied Physics Letters

Volumn 90, Issue 9, 2007, Pages

  Suzurikawa, Jun ^a   Takahashi, Hirokazu ^b   Kanzaki, Ryohei ^b   Nakao, Masayuki ^a   Takayama, Yuzo ^a   Jimbo, Yasuhiko ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BRAIN; CELL CULTURE; ELECTRIC CONDUCTIVITY; FUNCTIONAL ELECTRIC STIMULATION; PASSIVATION;

CULTURE MEDIA; NEURONAL ACTIVATION; PASSIVATION LAYERS; STIMULUS CHARGE DENSITY; ZINC ANTIMONATE;

ELECTRODES;

EID: 33847642030     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2709627     Document Type: Article

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