A 1/4.5in 3.1M pixel FT-CCD with 1.56μm pixel size for mobile applications

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 48, Issue , 2005, Pages

  Oda, Masahiro ^a   Kaida, Takayuki ^a   Izawa, Shinichiro ^a   Ogo, Takahiko ^a   Itsumi, Kazutaka ^a   Okada, Yoshihiro ^a   Sasada, Kazuhiro ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 28144444057     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Shou-Gwo Wuu et al., "A High Performance Active Pixel Sensor with 0.18μm CMOS Color Imager Technology," IEDM Tech. Dig. pp. 24.3.1-24.3.4, 2001.
2. M. Mori et al., "A 1/4in 2M Pixel CMOS Image Sensor with 1.75 Transistor/Pixel," ISSCC Dig. Tech. Papers, pp. 110-111, Feb., 2004.
3. Laurent Le Cam et al., "A 1/1.8" 3M Pixel FT-CCD with On-Chip Horizontal, Sub-Sampling for DSC Application," ISSCC Dig. Tech. Papers, pp. 166-167, Feb., 2002.
4. H. Muto, "3-D Optical and Electrical Simulation for CMOS Image Sensors," IEEE Workshop on CCDs and AISs, 2003.