Development of a homoepitaxial technology for fabrication of X- and γ-ray detectors based on CdTe p-i-n diodes

Nuclear Physics B - Proceedings Supplements

Volumn 166, Issue , 2007, Pages 262-265

  Lovergine, N ^a   Traversa, M ^a   Paiano, P ^a   Farella, I ^a,b   Prete, P ^b   Cola, A ^b   Quaranta, F ^b   Mancini, A M ^a  

^a UNIVERSITY OF SALENTO   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33847348853     PISSN: 09205632     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nuclphysbps.2006.12.022     Document Type: Article

References (7)

1. Sellin P. Nucl. Instr. Meth. Phys. Res. A 513 (2003) 332
2. Rybka A.V., Leonov S.A., Prokhoretz I.M., Abyzov A.S., Davydov L.N., Kutny V.E., Rowland M.S., and Smith C.F. Nucl. Instr. Meth. Phys. Res. A 458 (2001) 248 and references therein
3. Niraula M., Mochizuki D., Aoki T., Tomita Y., Nihashi T., and Hatanaka Y. IEEE Trans. Nucl. Sci. 46 (1999) 1237
4. Traversa M., Marzo F., Prete P., Tapfer L., Cappello A., Lovergine N., and Mancini A.M. Phys. Status Sol. (c) 3 (2006) 754
5. N. Lovergine, M. Traversa, P. Paiano, P. Prete, L. Tapfer, and A.M. Mancini, to be reported elsewhere
6. Pearton S.J., and Ren F. J. Vac. Sci. Technol. B 11 (1993) 15
7. Paiano P., Prete P., Lovergine N., and Mancini A.M. Cryst. Res. Technol. 40 (2005) 1011