Interfacial effect on thermal conductivity of Y2O3 thin films deposited on Al2O3

Thermochimica Acta

Volumn 455, Issue 1-2, 2007, Pages 50-54

  Yang, Ho Soon ^a   Kim, J W ^a   Park, G H ^a   Kim, C S ^a   Kyhm, K ^a   Kim, S R ^b   Kim, K C ^a   Hong, K S ^c  

^a Pusan National University   (South Korea)

^b LG Electronics Inc   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

3 method; Aluminum oxide; Interfacial thermal resistance; rf magnetron sputtering; Thermal conductivity; Yttrium oxide

Indexed keywords

ALUMINA; HEAT RESISTANCE; MAGNETRON SPUTTERING; THERMAL CONDUCTIVITY; YTTRIUM COMPOUNDS;

FILM THICKNESS; INTERFACIAL THERMAL RESISTANCE; RF MAGNETRON SPUTTERING;

THIN FILMS;

EID: 33847250860     PISSN: 00406031     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tca.2006.11.030     Document Type: Article

References (8)

1. Rastogi A.C., and Sharma R.N. J. Appl. Phys. 71 (1992) 5041-5052
2. Sharma R.N., Lakshmikumar S.T., and Rastogi A.C. Thin Solid Films 199 (1992) 1-8
3. Yang H.-S., Bai G.-R., Thompson L.J., and Eastman J.A. Acta Materialia 50 (2002) 2309-2317
4. Yamane T., Nagai N., Katayama S.-I., and Todoki M. J. Appl. Phys. 91 (2002) 9772-9776
5. Cahill D.G., Bullen A., and Lee S.-M. High Temperatures-High Pressures 32 (2000) 135-142
6. JCPDS File 88-1040, International Committee for Diffraction Data, Powder Diffraction File.
7. Nan C.-W., and Birringer R. Phys. Rev. B 57 (1997) 8264-8268
8. A.L. Edwards, For Computer Heat-Conduction Calculations-A Compilation of Thermal Properties Data, UCRL-50589, February 24, 1969.