Comparative analysis of GaAs/LDMOS/GaN high power transistors in a digital predistortion amplifier system

Asia-Pacific Microwave Conference Proceedings, APMC

Volumn 2, Issue , 2005, Pages

  Vassilakis, Bill ^a,b   Cova, Armando ^a,b  

^a IEEE   (United States)

^b Powerwave Technologies Inc   (United States)

Author keywords

Amplifier; Device modeling; Digital predistortion; Gallium arsenide; Gallium nitride; High power transmitters; Microwave power amplifiers; Microwave power FETs; MOS devices

Indexed keywords

DEVICE MODELING; DIGITAL PREDISTORTION AMPLIFIERS; DISTORTION CORRECTION TECHNIQUES; MICROWAVE POWER AMPLIFIERS;

GALLIUM NITRIDE; LINEARIZATION; POWER AMPLIFIERS; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMITTERS;

MOSFET DEVICES;

EID: 33847219999     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APMC.2005.1606487     Document Type: Conference Paper

References (3)

1. J. Kim and K. Konstantinou, "Digital predistortion of wideband signals based on a power amplifier model with, memory," Electronics Letters, vol. 37, no, 23, pp. 1417-1418, November 2001.
2. L. Ding, G. T. Zhou, D. R. Morgan, Z. Ma, J. S.Kenney, J. Kim, and C. R. Giardina, "A Robust Digital Baseband Predistorter Constructed Using Memory Polynomials," IEEE Trans. Communications, vol. 52, no. 1, pp. 159-165, January 2004.
3. S. Boumaiza and F. M. Ghannouchi, "Thermal memory effects modeling and compensation in RF power amplifiers and predistortion linearizers," IEEE Trans. Microwave Theory & Tech., vol. 51, no. 12, pp. 2427-2433, December 2003.