Lifetime study for a poly fuse in a 0.35μM polycide CMOS process

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 446-449

  Fellner, Johannes ^a   Boesmueller, Peter ^a   Reiter, Heinz ^a  

^a AMS AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 28744456317     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Mochizuki; Semiconductor devices having fuses; United States Patent 4,413,272; November 1983
2. M. Alavi, M. Bohr, J.Hicks; A PROM Element based on Salicide Agglomeration of Poly Fuses in a CMOS Logic Process; IEEE International Electron Device Meeting; December 1997
3. W.R. Tonti, J.A. Fifield, J. Higgins, W.H. Guthrie, W. Bery, C. Narayan; Product Specific Sub-Micron E-Fuse Reliability and Design Qualification; IEEE 2003 IRW Final Report
4. J.Simader; Entwicklung von Polyfuses als PROM Element für den CSD (0,35 μm CMOS) Prozess; Diploma Thesys, September 2002
5. Research Institute for Electron Microscopy and Fine Structure Research (FELMI); TU-Graz