High-efficiency and wide-band single-ended 200W GaN HEMT power amplifier for 2.1 GHz W-CDMA base station application

Asia-Pacific Microwave Conference Proceedings, APMC

Volumn 3, Issue , 2005, Pages

  Kawano, Akihiro ^a   Adachi, Nobuo ^a   Tateno, Yasunori ^a   Mizuno, Shin Ya ^a   Ui, Norihiko ^a   Nikaido, Jun Ichiro ^a   Sano, Seigo ^a  

^a Sumitomo Electric Device Innovations USA   (Japan)

Author keywords

Digital predistortion; Gan hemt; High efficiency; Power amplifier; Wide band

Indexed keywords

BANDWIDTH; BROADBAND NETWORKS; HIGH ELECTRON MOBILITY TRANSISTORS; POWER AMPLIFIERS;

ADJACENT CHANNEL LEAKAGE POWER RATIO (A.C.L.R.); BASE STATION; DIGITAL PREDISTORTION (D.P.D.); LOW MEMORY EFFECT;

RADAR STATIONS;

EID: 33847169554     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APMC.2005.1606618     Document Type: Conference Paper

References (2)

1. T. Kikkawa, M. Nagahara, N. Okamoto, Y.Tateno, Y. Yamaguchi, N. Hara, K. Joshin, and P. M. Asbeck: "Surface-Charge Controlled AlGaN/GaN-Power HFET without Current Collapse and Gm Dispersion", IEEE IEDM Tech. Digest, pp. 585-588, 2001.
2. K. Joshin, T. Kikkawa, H. Hayashi, T. Maniwa, S. Yokokawa, M. Yokoyama, N. Adachi, and M. Takikawa: "A 174W high-efficiency GaN HEMT power amplifier for W-CDMA base satation applications", IEEE IEDM Tech. Digest, pp. 983-985, 2003.