Pressure related defect engineering in silicon-on-insulator-like structures produced by either oxygen or nitrogen ion implantation

Physica Status Solidi (B) Basic Research

Volumn 244, Issue 1, 2007, Pages 443-447

  Antonova, I V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

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EID: 33847072707     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200672536     Document Type: Conference Paper

References (11)

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