First-principles study on the La3+ doping PbWO4 crystal for different doping concentrations

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 363, Issue 5-6, 2007, Pages 477-481

  Chen, Teng ^a   Liu, Ting Yu ^a   Zhang, Qi Ren ^a   Li, Fang Fei ^a   Tian, Dong Sheng ^a   Zhang, Xiu Yan ^a  

^a UNIVERSITY OF SHANGHAI FOR SCIENCE AND TECHNOLOGY   (China)

Author keywords

Electronic structures; La3+ doping; PbWO4 crystal; Simulation

Indexed keywords

CRYSTAL IMPURITIES; CRYSTALS; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; IONS; LEAD COMPOUNDS; OXYGEN; UTILITY PROGRAMS;

DEFECT CHEMISTRY; DOPING CONCENTRATION; FIRST-PRINCIPLES STUDY; FORMING DEFECTS; INTERSTITIAL OXYGEN IONS; PBWO4 CRYSTALS; RADIATION HARDNESS; SIMULATION;

LANTHANUM COMPOUNDS;

EID: 33847047184     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2006.11.020     Document Type: Article

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