Doping mechanism of heavily doped PbWO4: La3+

Physica Status Solidi (A) Applied Research

Volumn 193, Issue 2, 2002, Pages 211-216

  Zhu, W L ^a   Feng, X Q ^a   Huang, Y L ^a   Lin, Q S ^a   Wu, Z H ^b  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; DIMERS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC WAVE ABSORPTION; LANTHANUM; OXYGEN; POSITIVE IONS; SCINTILLATION; SUBSTITUTION REACTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

X-RAY ABSORPTION FINE STRUCTURES (EXAFS);

LEAD COMPOUNDS;

EID: 0036709288     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200209)193:2<211::AID-PSSA211>3.0.CO;2-B     Document Type: Article

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