High-resistivity silicon surface passivation for the thin-film MCM-D technology

2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers

Volumn 2006, Issue , 2006, Pages 46-49

  Posada, G ^a   Carchon, G ^a   Soussan, P ^a   Poesen, G ^a,c   Nauwelaers, B ^b   De Raedt, W ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c VRIJE UNIVERSITEIT BRUSSEL   (Belgium)

Author keywords

Ar implantation; High resistivity silicon; MCM D; Surface passivation; Thin film

Indexed keywords

ARGON; ELECTRIC CONDUCTIVITY; PASSIVATION; THERMODYNAMIC STABILITY; THIN FILMS;

AR IMPLANTATION; HIGH-RESISTIVITY SILICON; MCM-D; SURFACE PASSIVATION;

SILICON;

EID: 33847033378     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2005.1587901     Document Type: Conference Paper

References (9)

1. G. Carchon, K. Vaesen, S. Brebels, W. de Raedt, Erik Beine, B. Nauwelaers, "Multi-layer Thin-Film MCM-D for the Integration of High-Performance RF and Microwave Circuits," IEEE Trans. On Conponents and Packaging Technologies, vol. 24,NO. 3, Sept. 2001.
2. G. Carchon, W. de Raedt, B. Nauwelaers, "Integration of CPW Quadrature Couplers in Multi-Layer Thin-Film MCM-D," IEEE Transactions on Microwave Theory and Techniques, vol. 49, pp. 1770-1776, 2001.
3. G. Carchon, X. Sun, G. Posada, D. Linten, and E. Beyne, "Thin-Film as Enabling Technology for RF-SoC and RF-SiP," presented at ISSCC, San Francisco, CA, pp. 21.5, Feb. 6-10, 2005.
4. G. Posada, G. Carchon, B. Nauwelaers, and W. De Raedt, "Low loss coupled line filters with transmission zeros in multi-layer thin film MCM-D technology," presented at IEEE MTT-S Digest, Forth Worth, TX, pp. 1471-1474, June, 6-11, 2004.
5. G. Posada, G. Carchon, G. Poesen, B. Nauwelaers, W. De Raedt, "Thin-Film Multi-Chip Module Technology on High-Resistivity Si for the Integration of Millimeter-Wave Systems" presented at Nefertiti Workshop on Millimeter-Wave Photonic Devices and Technologies for Wireless and Imaging Applications, Brussels, Belgium, Jan, 17-19, 2005.
6. H. S. Gamble, B. M Armstrong, S. J. N. Mitchell, Y. Wu, V. F. Fusco, J. A. C. Stewart, "Low-Loss CPW Lines on Surface Stabilized High-Resistivity Silicon", IEEE Microw. Guided Wave Letters, Vol. 9, NO. 10, pp. 395-397, Oct. 1999.
7. B. Rong, J. N. Burghartz, L.K. Nanver, B. Rejaei, M. van der Zwan, "Surface-Passivated High-Resistivity Silicon Substrates for RFICs", IEEE Electron Dev. Lett, Vol. 25, NO. 4, pp. 176-178, April 2004.
8. A. B. M. Jansman, J. T. M. van Beek, M. H. W. M. Van Delden, A. L. A. M. Kemmeren, A. den Dekker, F. P. Widdershoven, "Elimination of Accumulation Charge Effects for High-Resistive Silicon Substrates", European Solid-State Device Research, pp. 3-6, Sept. 2003.
9. M. Spirito, F. M. De Paola, L. K. Nanver, E. Valetta, B. Rong, B. Rajaei, L. C. N. De Vreede, J. N. Burghartz, "Surface-Passivated High-Resistivity Silicon as a True Microwave Substrate" IEEE Trans, on Microw. Theory Tech., Vol. 53, NO 7, pp. 2340-2347, July 2005.