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Volumn 3, Issue 7, 2006, Pages 817-821
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Germanium MOSFETs for nanoelectronics
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTALLINE MATERIALS;
GERMANIUM COMPOUNDS;
HOLE MOBILITY;
NANOSTRUCTURED MATERIALS;
PASSIVATION;
PERMITTIVITY;
SINGLE CRYSTALS;
GERMANIUM MOSFETS;
HYDROGEN ANNEAL PROCESS;
NANOELECTRONICS;
SURFACE PASSIVATION;
MOSFET DEVICES;
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EID: 33846986002
PISSN: 19385862
EISSN: 19386737
Source Type: Conference Proceeding
DOI: 10.1149/1.2355876 Document Type: Conference Paper |
Times cited : (4)
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References (11)
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