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Volumn 51, Issue 23, 2006, Pages 6077-6086

Experimental evaluation of a MOSFET dosimeter for proton dose measurements

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE MEASUREMENT; ENERGY TRANSFER; MOSFET DEVICES; PROTON BEAMS; PROTONS;

EID: 33846882152     PISSN: 00319155     EISSN: 13616560     Source Type: Journal    
DOI: 10.1088/0031-9155/51/23/009     Document Type: Article
Times cited : (26)

References (17)
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  • 2
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    • The response of a MOSFET, p-type semiconductor and LiF TLD to quasi-monoenergetic x-rays
    • Edwards C R, Green S, Palethorpe J E and Mountford P J 1997 The response of a MOSFET, p-type semiconductor and LiF TLD to quasi-monoenergetic x-rays Phys. Med. Biol. 42 2383-91
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    • Edwards, C.R.1    Green, S.2    Palethorpe, J.E.3    Mountford, P.J.4
  • 4
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    • Experimental evaluation for validity of simplified Monte Carlo method in proton dose calculations
    • Kohno R, Takada Y, Sakae T, Terunuma T, Matsumoto K, Nohtomi A and Matsuda H 2003 Experimental evaluation for validity of simplified Monte Carlo method in proton dose calculations Phys. Med. Biol. 48 1277-88
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    • A review of proton beam radiation therapy
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  • 13
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    • Characteristics and performance of a micro-MOSFET: An imageable dosimeter for image-guided radiotherapy
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  • 14
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    • Evaluation of a dual met al oxide semiconductor field-effect transistor detector as radiation dosimeter
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    • Tallon R W, Kemp W T, Ackermann M R, Owen M H and Hoffland A H 1987 Radiation damage in MOS transistors as a function of the angle between an applied electric field and various incident radiations (protons, electrons, and Co-60 gamma rays) IEEE Trans. Nucl. Sci. 34 1208-13
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.