Predicting the influence of trapped particles on EUVL reticle distortion during exposure chucking

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6349 I, Issue , 2006, Pages

  Ramaswamy, Vasu ^a   Turner, Kevin T ^a   Engelstad, Roxann L ^a   Lovell, Edward G ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

EUV lithography; FE analysis; Image placement errors; Particle contamination; Reticle distortion

Indexed keywords

IMAGE PLACEMENT ERRORS; LOCALIZED FINITE ELEMENT (FE) MODELS; PARTICLE CONTAMINATION; RETICLE DISTORTION;

ELECTROSTATICS; FINITE ELEMENT METHOD; MASKS; MATHEMATICAL MODELS; PHOTOLITHOGRAPHY;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 33846597166     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.686145     Document Type: Conference Paper

References (5)

1. SEMI P37-1102, SEMI Standard Specification for Extreme Ultraviolet Lithography Substrates.
2. M. Nataraju, J. Sohn, A. Mikkelson, K. Turner, R. Engelstad, and C. Van Peski, "EUV Mask and Chuck Analysis - Simulation and Experimentation," Proceedings of Emerging Lithographic Technologies X, SPIE, Vol. 6151, p. 61510C, 2006.
3. R. Tejeda, R. Engelstad, E. Lovell, and K. Blaedel, "Particle- Induced Distortion in Extreme Ultraviolet Lithography Reticles During Exposure Chucking," Journal of Vacuum Science and Technology B, Vol. 20, No. 6, pp. 2840-2843, 2002.
4. R. Tejeda, R. Engelstad, E. Lovell, A. Anderson, D. Yang, and K. Blaedel, "Determination of the Plastic Behavior of Low Thermal Expansion Glass at the Nanometer Scale," MRS Proceedings, Vol. 738, pp. 413-418, 2003.
5. SEMI P40-1103, SEMI Standard Specification for Mounting Requirements and Alignment Reference Locations for Extreme Ultraviolet Lithography Masks.