Thick position-sensitive silicon detectors using a wafer bonding technique

IEEE Nuclear Science Symposium Conference Record

Volumn 3, Issue , 2005, Pages 1412-1415

  Phlips, Bernard F ^a,b   Kurfess, James D ^a,b   Kub, Francis J ^a,b   Hobart, Karl D ^a,b  

^a IEEE   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROPHOBIC BONDING; READOUT WAFERS; STRIP DETECTORS; X RAY DETECTORS;

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; RADIATION DETECTORS; READOUT SYSTEMS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

SILICON SENSORS;

EID: 33846596998     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NSSMIC.2005.1596584     Document Type: Conference Paper

References (7)

1. D. Protic, T. Krings, and R. Schleichert, "Development of double-sided microstructured Si(Li)-detectors," 2001 IEEE Nuclear Sciences Symposium Conference Record, paper R16-2, 2002.
2. B.F. Phlips, W.N. Johnson, R.A. Kroeger, and J.D. Kurfess, "Development of thick intrinsic silicon detectors for hard X-ray and gamma ray detection," 2001 IEEE Nuclear Sciences Symposium Conference Record, paper N12-12, 2002.
3. Patent pending.
4. US Patent No. 6,194,290.
5. Q-Y Tong and U. Gosele, Semiconductor wafer bonding, The Electrochemical Society Series, Pennington, NJ, p. 130, 1999.
6. R.H. Esser, K. D. Hobart, F. J. Kub, "Directional diffusion and void formation in a Si (001) bonded wafer interface," Journal of Applied Physics, vol. 92, no. 4, pp1945-1949, August 2002.
7. SINTEF ICT, P.O. Box 124 Blindern, N-031 Oslo, Norway.