Tunable electronically anisotropic materials with ion-irradiated polysilanes on semiconductor

Applied Physics A: Materials Science and Processing

Volumn 86, Issue 4, 2007, Pages 469-476

  Fink, D ^a   Chandra, A ^a,b   Opitz Coutureau, J ^a   Fahrner, W R ^c   Hoppe, K ^d   Papaleo, R M ^e  

^a HAHN MEITNER INSTITUT   (Germany)

^b UNIVERSITY OF DELHI   (India)

^c UNIVERSITY OF HAGEN   (Germany)

^d South Westfalia University of Applied Sciences   (Germany)

^e PONTIFICAL CATHOLIC UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; POLYSILANES; SILICON WAFERS; SPIN COATING;

ANNEALING TEMPERATURE; DIFFERENTIAL RESISTANCE; GATING VOLTAGE; ION FLUENCE;

SEMICONDUCTOR MATERIALS;

EID: 33846577237     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-006-3777-8     Document Type: Article

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