Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 1, 2007, Pages 304-308

  Monemar, B ^a   Paskov, P P ^a   Bergman, J P ^a   Keller, S ^b   DenBaars, S P ^b   Mishra, U K ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; ELECTRON HOLE OVERLAP; INSERTION LAYER;

ALUMINUM NITRIDE; BAND STRUCTURE; ELECTRON TUNNELING; EXCITONS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT POLARIZATION; PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33846453274     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200673581     Document Type: Conference Paper

References (5)

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5. S. Keller, S. Heikman, L. Shen, I. P. Smorchkova, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 80, 4387 (2002).