Microstripe-array InGaN light-emitting diodes with individually addressable elements

IEEE Photonics Technology Letters

Volumn 18, Issue 15, 2006, Pages 1681-1683

  Zhang, H X ^a   Gu, E ^a   Jeon, C W ^b   Gong, Z ^a   Dawson, M D ^a   Neil, M A A ^c   French, P M W ^c  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

InGaN; Light emitting diode (LED); Micropixellated light emitting diode (LED)

Indexed keywords

A-CENTER; CONTINUOUS-WAVE OUTPUT POWER; EMISSION WAVELENGTH; STRUCTURED ILLUMINATION; TURN ON VOLTAGE; ULTRA-VIOLET; WIDE-FIELD;

DIODES; LIGHT EMISSION; OPTICAL MICROSCOPY;

LIGHT EMITTING DIODES;

EID: 33846410023     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.879926     Document Type: Article

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