An organic FET SRAM for braille sheet display with back gate to increase static noise margin

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2006, Pages

  Takamiya, Makoto ^a   Sekitani, Tsuyoshi ^a   Kato, Yusaku ^a   Kawaguchi, Hiroshi ^b   Someya, Takao ^a   Sakural, Takayasu ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b KOBE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTUATORS; CIRCUIT THEORY; GATE DIELECTRICS; SEMICONDUCTING ORGANIC COMPOUNDS; STATIC RANDOM ACCESS STORAGE;

CIRCUIT TECHNOLOGY; LARGE-AREA ELECTRONICS; STATIC NOISE MARGIN;

FIELD EFFECT TRANSISTORS;

EID: 33846254757     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. T. Someya et al., "Cut-and-Paste Organic FET Customized ICs for Application to Artificial Skin," ISSCC Dig. of Tech. Papers, pp. 288-289, Feb., 2004.
2. H. Kawaguchi et al., "A Sheet-Type Scanner Based on a 3D Stacked Organic-Transistor Circuit with Double Word-Line and Double Bit-Line Structure," ISSCC Dig. of Tech. Papers, pp. 580-581, Feb., 2005.
3. Y. Kato et al., "A Flexible, Lightweight Braille Sheet Display with Plastic Actuators Driven by an Organic Field-Efiect Transistor Active Matrix," IEDM Tech. Dig., pp. 105-108, Dec., 2005.
4. S. Iba et al., "Control of Threshold Voltage of Organic Field-Effect Transistors with Double Gate Structure," Applied Physics Letters, 87, 023509, July, 2005.