Diode-end-pumped passively CW mode-locked Nd:YLF laser by the LT-In 0.25Ga0.75 as absorber

IEEE Journal of Quantum Electronics

Volumn 42, Issue 10, 2006, Pages 1097-1100

  Pan, Shu Di ^a   He, Jing Liang ^a,b   Hou, Yu E ^b   Fan, Ya Xian ^b   Wang, Hui Tian ^b   Wang, Yong Gang ^c   Ma, Xiao Yu ^c  

^a SHANDONG NORMAL UNIVERSITY   (China)

^b NANJING UNIVERSITY   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Diode pumped lasers; Mode locked lasers; Neodymium solid state lasers; Semiconductor absorber

Indexed keywords

CONTINUOUS WAVE MODES; DIODE END-PUMPED; DIODE PUMPED LASERS; INCIDENT PUMP POWER; LOW TEMPERATURES; METAL-ORGANIC; MODE-LOCKED; MODE-LOCKED LASER; MODE-LOCKED LASERS; ND:YLF LASER; OUTPUT COUPLERS; OUTPUT POWER; PEAK POWER; PULSE DURATIONS; PULSE ENERGIES; REPETITION RATE; SATURABLE ABSORBERS; SEMICONDUCTOR ABSORBERS; SEMICONDUCTOR SATURABLE ABSORBER MIRRORS; SINGLE QUANTUM WELL; VAPOR-DEPOSITION TECHNIQUES;

FIBER LASERS; LASERS; MIRRORS; MODE-LOCKED FIBER LASERS; NEODYMIUM; ORGANIC CHEMICALS; PULSE REPETITION RATE; PUMPING (LASER); Q SWITCHED LASERS; SEMICONDUCTOR DIODES; SOLID STATE LASERS; YLF LASERS;

NEODYMIUM LASERS;

EID: 33846223488     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.882032     Document Type: Article

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