The charge transport properties of a-Si:H thin films under hydrostatic pressure

Materials Science and Engineering: B

Volumn 130, Issue 1-3, 2006, Pages 184-188

  Hahn, W ^a   Boshta, M ^a   Barner K ^a   Braunstein, R ^b  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Amorphous silicon; Hydrostatic pressure; Transient thermoelectric effects

Indexed keywords

AMORPHOUS SILICON; ELECTRON TRAPS; HOLE TRAPS; HYDROSTATIC PRESSURE; THERMOELECTRICITY; TRANSPORT PROPERTIES;

CHARGE DISTRIBUTION; TRANSIENT THERMOELECTRIC EFFECTS; TRAP LEVELS; TRAP STATE DENSITY;

THIN FILMS;

EID: 33846198443     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.03.007     Document Type: Article

References (15)

1. W. Hoffmann, in: B. McNellis, W. Palz, A. Ossenbrink, P. Helm (Eds.), Proceedings of the 17th EPVSEC, Munich, Germany, 2001, WIP Munich, München, Germany, 2002, p. 851.
2. Rech B., and Wagner H. Appl. Phys. A: Mater. Sci. Process. 69 (1999) 155
3. Minomura S. Pressure Effects on the Local Atomic Structure. In: Pankove J.I. (Ed). Semiconductor and Semimetals vol. 21A (1984), Academic Press, Inc. 273
4. Okayasu Y., Asai K., Yamamoto H., Fukui K., and Minomura S. Stability of Amorphous Silicon Alloy Materials and Devices, NREL/SNL Photovoltaics Program Review Meeting, AIP Conference Proceedings, vol. 157 (1987) 271
5. Doyle J., Robertson R., Lin G.H., He M.Z., and Gallagher A. J. Appl. Phys. 64 6 (1988) 3215
6. Wiesmann H., Ghosh A.K., and T. McMahon M.S. J. Appl. Phys. 50 5 (1979) 3752
7. Liebe J. Untersuchungen stabiler und lichtinduzierter Defekte in a-Si:H durch die Photoleitfrequenzmischung und zeitaufgelöste thermoelektrische Effekte (1998), Georg-August-Universität Göttingen, Doktorarbeit p. 7
8. Liebe J., Heinmann K., Bärner K., Medvedeva I.V., Tang Yi., Dong S., and Braunstein R. Transient ambipolar charge distributions in amorphous and crystalline semiconductors. Mater. Sci. Eng. B 47 (1997) 244-251
9. A.R. Middya, J. Guillert, R. Brenot, J. Perrin, J.E. Bouree, C. Longeaud, in: S. Wagner, M. Hack, E.A. Schiff, R. Schropp (eds.), Amorphous Silicon Technology-1997, vol. 467, Materials Research Society, Pittsburgh, PA, USA, Proceedings of the MRS Symposium, San Francisco, CA, USA, March 31-April 4, 1997, p. 271.
10. Street R.A., and Hack M. J. Thin Solid Films 296 (1997) 172-176
11. R.A. Street, M.Hack, Thin film materials for large area electronics, in: B. Drevillon, B. Equer, I. French, T. Kallfass (Eds.), Spring Meeting of the European Materials Research Society 1996, Symposium B, Strasbourg, France, 04-07 June 1996.
12. W.F. Sherman, A.A. Stadmüller, Experimental Techniques in High-Pressure Research, vol. 1, 1987 ed., John Wiley & Sons Ltd., Chichester, New York, Brisbane, Toronto, Singapore, p. 34 (Chapter 20).
13. Hahn W. TTE Measurement of a-Si:H Under Hydrostatic Pressure (2004), Georg-August-Universität Göttingen, Diplomarbeit
14. Liebe J., Kattwinkel A., Bärner K., Sun G., Dong S., and Braunstein R. Mater. Sci. Eng. A 282 (2000) 158-163
15. Fedders P.A., Drabold D.A., and Nakhmanson S. Phys. Rev. B 58 23 (1998)