Synthesis of GaN nanorods by ammoniating Ga2O3/ZnO films

Chinese Physics Letters

Volumn 23, Issue 11, 2006, Pages

  Xue, Shou Bin ^a   Zhuang, Hui Zhao ^a   Xue, Cheng Shan ^a   Hu, Li Jun ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; NANORODS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; X RAY DIFFRACTION; ZINC SULFIDE;

950° C; GAN NANORODS; HEXAGONAL WURTZITE STRUCTURE; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INFRARED PHOTOLUMINESCENCE; OPTOELECTRONICS DEVICES; QUARTZ TUBES; SI-BASED; SYNTHESISED; ZNO FILMS;

FOURIER TRANSFORM INFRARED SPECTROSCOPY;

EID: 33846159888     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/11/047     Document Type: Article

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