Optimum barrier thickness study for the InGaAs/InAlAs/AlAs heterostructure barrier varactor diodes

Applied Physics Letters

Volumn 90, Issue 1, 2007, Pages

  Emadi, T A ^a   Bryllert, T ^a   Sadeghi, M ^a   Vukusic, J ^a   Stake, J ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; FREQUENCY MULTIPLYING CIRCUITS; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; VARACTORS;

DESTRUCTIVE CURRENT LEAKING; HETEROSTRUCTURE BARRIER VARACTOR (HBV); OPERATING TEMPERATURES;

HETEROJUNCTIONS;

EID: 33846036868     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2430632     Document Type: Article

References (6)

1. P. H. Siegel, IEEE Trans. Microwave Theory Tech. 52, 2438 (2004).
2. H. Xu, J. L. Hesler, Y. Duan, T. W. Crowe, and R. M. Weikle, IEEE MTT-S Int. Microwave Symp. Dig. 3, 2031 (2003).
3. J. Stake, L. Dillner, S. Jones, C. Mann, J. Thornton, J. Jones, W. Bishop, and E. Kollberg, IEEE Trans. Electron Devices 45, 2298 (1998).
4. K. Krishnamurthi, S. M. Nilsen, and R. G. Harrison, IEEE Trans. Microwave Theory Tech. 42, 2512 (1994).
5. Y. Fu, J. Stake, L. Dillner, M. Willander, and E. Kollberg, J. Appl. Phys. 82, 5568 (1997).
6. C. S. Kyono, V. P. Kesan, D. P. Neikirk, C. M. Maziar, and B. G. Streetman, Appl. Phys. Lett. 54, 549 (1989).