First electrical characterization of 3D detectors with electrodes of the same doping type

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 570, Issue 2 SPEC. ISS., 2007, Pages 317-321

  Pozza, Alberto ^a   Boscardin, Maurizio ^a   Bosisio, Luciano ^b   Dalla Betta, Gian Franco ^c   Piemonte, Claudio ^a   Ronchin, Sabina ^a   Zorzi, Nicola ^a  

^a ITC IRST   (Italy)

^b UNIVERSITY OF TRIESTE   (Italy)

^c UNIVERSITY OF TRENTO   (Italy)

Author keywords

3D detectors; DRIE etching; Electrical characterization; Fabrication technology; Silicon detectors

Indexed keywords

COLLIDING BEAM ACCELERATORS; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRODES; LEAKAGE CURRENTS; RADIATION HARDENING; SILICON SENSORS;

ELECTRICAL CHARACTERIZATION; FABRICATION TECHNOLOGY; LARGE HYDREN COLLIDERS (LHC); SILICON RADIATION;

PARTICLE DETECTORS;

EID: 33845916869     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.09.032     Document Type: Article

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